Process Development Engineer – GaN
Germany - Dresden
Permanent
Process Development Engineer – GaN (Germany)
Highly competitive salary + excellent benefits
We’re seeking a Process Development Engineer specializing in GaN and Wide Band Gap semiconductor technologies to join our clients innovative team. If you're passionate about advancing cutting-edge semiconductor devices and processes, this role is for you!
Key Responsibilities:
Develop GaN and Wide Band Gap semiconductor devices and process flows.
Lead the design and optimization of device architectures.
Conduct TCAD simulations for devices and processes.
Implement and evaluate experiments using Design of Experiments (DoE) methodologies.
Design and develop test structures for device validation.
Perform electrical characterization of GaN and Wide Band Gap devices.
Collaborate with cross-functional teams for process integration.
Provide technical support to customers.
Work closely with external partners to drive development initiatives.
Manage interdisciplinary and international development projects.
Requirements:
Proven expertise in GaN / Wide Band Gap semiconductor device and process development.
Experience in defining semiconductor process flows and device architectures.
Strong skills in TCAD simulations and DoE experiment design.
Proficiency in electrical characterization and test structure development.
Ability to manage projects and collaborate across teams and cultures.
Interested? Reach out to Christina McGuire to learn more about this exciting opportunity!
Highly competitive salary + excellent benefits
We’re seeking a Process Development Engineer specializing in GaN and Wide Band Gap semiconductor technologies to join our clients innovative team. If you're passionate about advancing cutting-edge semiconductor devices and processes, this role is for you!
Key Responsibilities:
Develop GaN and Wide Band Gap semiconductor devices and process flows.
Lead the design and optimization of device architectures.
Conduct TCAD simulations for devices and processes.
Implement and evaluate experiments using Design of Experiments (DoE) methodologies.
Design and develop test structures for device validation.
Perform electrical characterization of GaN and Wide Band Gap devices.
Collaborate with cross-functional teams for process integration.
Provide technical support to customers.
Work closely with external partners to drive development initiatives.
Manage interdisciplinary and international development projects.
Requirements:
Proven expertise in GaN / Wide Band Gap semiconductor device and process development.
Experience in defining semiconductor process flows and device architectures.
Strong skills in TCAD simulations and DoE experiment design.
Proficiency in electrical characterization and test structure development.
Ability to manage projects and collaborate across teams and cultures.
Interested? Reach out to Christina McGuire to learn more about this exciting opportunity!
19003U0A
| Post-Silicon / Manufacturing / Process: | Process Engineering |
